Method for fabricating a semiconductor wafer

Details Method for fabricating a semiconductor wafer Method for fabricating a semiconductor wafer

1996-12-12

1998-12-15

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438747, 438974, H01L 21302

Patent

active

058496360

ABSTRACT:
A method processes a semiconductor wafer by etching the wafer, which has been smoothed by rough lapping, with alkaline solution. A rod is sliced into a plurality of wafers. The peripheral edges of the wafers are chamfered. The processed strain layers over the wafers due to chamfering are smoothed and planarized. The processed strain layers are then removed by etching with alkaline solution. The etched wafers are mirror polished. Lastly, the mirror-polished wafers are cleaned.

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patent: 5360509 (1994-11-01), Zakaluk et al.
patent: 5447890 (1995-09-01), Kato et al.
patent: 5494862 (1996-02-01), Kato et al.
patent: 5516706 (1996-05-01), Kasakabe

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