Method for fabricating a semiconductor structure

Details Method for fabricating a semiconductor structure Method for fabricating a semiconductor structure

2005-11-22

2005-11-22

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S251000, C438S250000, C438S229000, C257S300000

Reexamination Certificate

active

06967133

ABSTRACT:
The present invention provides a method for fabricating a semiconductor structure having a plurality of gate stacks (GS1, GS2, GS3, GS4) on a semiconductor substrate (10), having the following steps: application of the gate stacks (GS1, GS2, GS3, GS4) to a gate dielectric (11) above the semiconductor substrate (10); formation of a sidewall oxide (17) on sidewalls of the gate stacks (GS1, GS2, GS3, GS4); application and patterning of a mask (12) on the semiconductor structure; and implantation of a contact doping (13) in a self-aligned manner with respect to the sidewall oxide (17) of the gate stacks (GS1, GS2) in regions not covered by the mask (12).

REFERENCES:
patent: 6211007 (2001-04-01), Prall et al.
patent: 6403423 (2002-06-01), Weybright et al.
patent: 6444548 (2002-09-01), Divakaruni et al.
patent: 2002/0100930 (2002-08-01), Yeagashi
patent: 195 27 146 (1997-01-01), None
patent: 198 60 769 (1999-07-01), None

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