Method for fabricating a semiconductor memory having charge...

Details Method for fabricating a semiconductor memory having charge... Method for fabricating a semiconductor memory having charge...

2006-03-21

2006-03-21

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S306000

Reexamination Certificate

active

07015095

ABSTRACT:
Electrically conductive material is introduced into interspaces between the word lines (2) and is partially removed using a mask (6) in such a way that residual portions (7) of the conductive material in each case fill a section of the relevant interspace and produce an electrical contact with source/drain regions (15). With further portions of the conductive material, it is possible to form alignment marks for the fabrication process.

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patent: WO 99/60631 (1999-11-01), None

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