Method for fabricating a semiconductor memory device

Details Method for fabricating a semiconductor memory device Method for fabricating a semiconductor memory device

2005-02-22

2005-02-22

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000, C438S256000, C438S399000

Reexamination Certificate

active

06858492

ABSTRACT:
Capacitor devices are formed in an essentially vertically extending fashion in order to achieve an essentially three-dimensional configuration or a configuration extending into the third dimension. A contacting of plug regions is performed after producing the capacitor devices. Such capacitor devices provide an increased integration density in a semiconductor memory device.

REFERENCES:
patent: 4630088 (1986-12-01), Ogura et al.
patent: 5006909 (1991-04-01), Kosa
patent: 5538592 (1996-07-01), Chen et al.
patent: 5712813 (1998-01-01), Zhang
patent: 5828094 (1998-10-01), Lee
patent: 5895946 (1999-04-01), Hamamoto et al.
patent: 5930639 (1999-07-01), Schuele et al.
patent: 6094335 (2000-07-01), Early
patent: 6124164 (2000-09-01), Al-Shareef et al.
patent: 6208501 (2001-03-01), Ingalls et al.
patent: 6232169 (2001-05-01), Widmann et al.
patent: 6355518 (2002-03-01), Wu et al.
patent: 6365452 (2002-04-01), Perng et al.
patent: 6448615 (2002-09-01), Forbes et al.
patent: 6504198 (2003-01-01), Morimoto
patent: 6528366 (2003-03-01), Tu et al.
patent: 195 43 539 (1997-04-01), None
patent: 198 34 649 (2000-03-01), None
patent: 05 343 615 (1993-12-01), None

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