Method for fabricating a semiconductor memory device

Details Method for fabricating a semiconductor memory device Method for fabricating a semiconductor memory device

1998-06-18

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438266, 438264, H01L 21336

Patent

active

060080884

ABSTRACT:
A method for fabricating a semiconductor memory device such as an EEPROM including, in a semiconductor substrate having a first conductivity type, forming a source region and a drain region having a second conductivity type opposite to the first conductivity type. A trench having a prescribed thickness from a main surface of said semiconductor substrate toward inside thereof is formed in an area to be an element isolation region of the semiconductor substrate. A remaining portion of the semiconductor substrate defines an element forming region. Embedding an element isolation insulating film in the trench to substantially fill the trench. A first insulating film is formed on the element forming region and on at least a portion of the element isolation insulating film. A floating gate electrode is formed on the first insulating film, a second insulating film is formed on the floating gate electrode, a control gate electrode is formed on the second insulating film, a third insulating film to be a tunneling medium is formed on a side of the floating gate electrode, and an erasing gate electrode is formed so as to cover said third insulating film.

REFERENCES:
patent: 3984822 (1976-10-01), Simko et al.
patent: 4300279 (1981-11-01), Wieder
patent: 4698900 (1987-10-01), Esquivel
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5229312 (1993-07-01), Mukherjee et al.
patent: 5231299 (1993-07-01), Ning et al.
patent: 5712179 (1998-01-01), Yuan
patent: 5753951 (1998-05-01), Geissler
patent: 5756385 (1998-05-01), Yuan et al.
patent: 5838039 (1998-11-01), Sato et al.
patent: 5851881 (1998-12-01), Lin et al.
patent: 5854114 (1998-12-01), Li et al.
patent: 5879983 (1999-03-01), Segawa et al.

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