Method for fabricating a semiconductor memory cell

Details Method for fabricating a semiconductor memory cell Method for fabricating a semiconductor memory cell

2007-05-08

2007-05-08

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C257S004000

Reexamination Certificate

active

11074946

ABSTRACT:
Semiconductor memory cell and also a corresponding fabrication method are described, in which a first or bottom electrode device of the memory element of the semiconductor memory cell according to the invention and the gate electrode device of the underlying field effect transistor as selection transistor of the semiconductor memory cell are formed as the same material region or with a common material region.

REFERENCES:
patent: 2001/0045605 (2001-11-01), Miyashita et al.
patent: 2002/0168820 (2002-11-01), Kozicki et al.
patent: 2003/0234397 (2003-12-01), Schmid et al.
patent: 2003060090 (2003-02-01), None

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