Method for fabricating a semiconductor memory cell

Details Method for fabricating a semiconductor memory cell Method for fabricating a semiconductor memory cell

2007-09-25

2007-09-25

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000

Reexamination Certificate

active

11021626

ABSTRACT:
In order to be able to store information in a non-volatile fashion as compactly and as flexibly as possible in a semiconductor memory cell, the original gate region of a conventional memory transistor is removed, and a memory gate configuration having a plurality of memory gates that are spatially separate from one another and that are electrically insulated with respect to one another is formed.

REFERENCES:
patent: 5887243 (1999-03-01), Harvey et al.
patent: 5999453 (1999-12-01), Kawata
patent: 6011725 (2000-01-01), Eitan
patent: 6281545 (2001-08-01), Liang et al.
patent: 6465836 (2002-10-01), Lin et al.
patent: 6762092 (2004-07-01), Yuan et al.
patent: 6778441 (2004-08-01), Forbes et al.
patent: 2003/0042528 (2003-03-01), Forbes

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3745863