Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-10-03
1999-08-17
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438328, 438380, H01L 218234
Patent
active
059407000
ABSTRACT:
A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity. The diode comprises also a buried anode region having a first type of conductivity and a cathode region having a second type of conductivity. The cathode region comprises an epitaxial layer located above the buried anode region and a highly doped region provided inside the epitaxial layer. The buried anode region comprises depressions opposite which is located the highly doped region with the depressions being achieved by the intersection of lateral diffusions of distinct and adjacent portions of the buried anode region.
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Gallagher, "Italy's SGS Claims Lead in Vertical PNP Devices," Electronics, vol. 59, No. 2, p. 22 (1986).
Galbiati Paola
Mastromatteo Ubaldo
Brown Peter Toby
Duong Khanh
SGS-Thomson Microelectronics, 2 Via C. Olivetti
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