Method for fabricating a semiconductor device with multi-level s

Details Method for fabricating a semiconductor device with multi-level s Method for fabricating a semiconductor device with multi-level s

1997-07-09

1999-10-26

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438769, 438775, 438787, 438791, 438770, H01L 21316

Patent

active

059728000

ABSTRACT:
A method for fabricating a semiconductor device with a multi-level insulator formed on a semiconductor substrate is provided, which enables restraint of impurity atoms doped into a material contacted with the insulator from diffusing into the insulator and substrate. A first dielectric film formed on the substrate is made of an oxide of a semiconductor constituting the substrate by thermal treatment of the substrate in an oxygen atmosphere. The second dielectric film is disposed at the interface of the substrate and first dielectric and is made of a nitride or oxynitride of the semiconductor constituting the substrate by thermal treatment of the substrate and first dielectric in a nitride atmosphere. The insulator preferably contains only the first and second dielectric films to have a two-level structure. The insulator may further contain a third dielectric film formed over the multi-level structure, thereby having a three-level insulator structure.

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