Method for fabricating a semiconductor device with a FinFET

Details Method for fabricating a semiconductor device with a FinFET Method for fabricating a semiconductor device with a FinFET

2011-03-29

2011-03-29

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S696000, C438S706000, C438S331000

Reexamination Certificate

active

07915108

ABSTRACT:
A method for fabricating a semiconductor device includes forming a device isolation structure in a substrate to define active regions, forming a hard mask pattern to open a region defining an active region pattern and to cover the device isolation structure, forming the active region pattern by selectively recessing the device isolation structure formed in the opened region using the hard mask pattern as an etch barrier, removing the hard mask pattern, forming a gate insulation layer over the substrate to cover at least the active region pattern, and forming a gate electrode over the gate insulation layer to cover at least the active region pattern.

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Notice of Allowance issued from the Chinese Patent Office on Dec. 16, 2009.
Notice of Allowance issued from the Taiwanese Intellectual Property Office on Jun. 22, 2010.

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