Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-23
2007-01-23
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S675000, C438S786000, C438S791000, C427S255270, C427S255394
Reexamination Certificate
active
10696775
ABSTRACT:
The semiconductor device fabrication method comprises the step of forming gate electrode20on a semiconductor substrate10with a gate insulation film18formed therebetween; the step of implanting dopants in the semiconductor substrate10with the gate electrode20as the mask to form dopant diffused regions28, 36; the step of forming a silicon oxide film38on the semiconductor substrate10, covering the gate electrodes20; anisotropically etching the silicon oxide film38to form sidewall spacers42including the silicon oxide film38on the side walls of the gate electrode20. In the step of forming a silicon oxide film38, the silicon oxide film38is formed by thermal CVD at a 500–580° C. film forming temperature, using bis(tertiary-butylamino)silane and oxygen as raw materials. Silicon oxide film38is formed at a relatively low film forming temperature, whereby the diffusion of the dopant in the doapnt diffused regions28, 36forming the shallow region of the extension source/drain structure can be suppressed.
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Furuhashi Masayuki
Kim Young Suk
Mori Toshifumi
Nakamura Ryou
Ohba Takayuki
Fujitsu Limited
Smoot Stephen W.
Westerman, Hattori, Daniels & Adrian , LLP.
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