Method for fabricating a semiconductor device including a...

Details Method for fabricating a semiconductor device including a... Method for fabricating a semiconductor device including a...

2005-04-26

2005-04-26

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S398000, C438S660000

Reexamination Certificate

active

06884674

ABSTRACT:
A semiconductor device has a capacitance insulating film having a perovskite structure represented by the general formula ABO3(where each of A and B is a metal element) and first and second electrodes opposed to each other with the capacitance insulating film interposed therebetween. The capacitance insulating film is formed such that the composition of the metal element A or B is higher in the region thereof adjacent the first electrode than in the other region thereof.

REFERENCES:
patent: 5973911 (1999-10-01), Nishioka
patent: 6335207 (2002-01-01), Joo et al.
patent: 6337239 (2002-01-01), Dehm et al.
patent: 6365420 (2002-04-01), Ashida
patent: 6396092 (2002-05-01), Takatani et al.
patent: 6579754 (2003-06-01), Suenaga et al.
patent: 09282943 (1997-10-01), None
patent: 10012832 (1998-01-01), None

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