Method for fabricating a semiconductor device including...

Details Method for fabricating a semiconductor device including... Method for fabricating a semiconductor device including...

2006-10-17

2006-10-17

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S535000, C438S572000

Reexamination Certificate

active

07122451

ABSTRACT:
A semiconductor device has an active region composed of a group III–V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

REFERENCES:
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patent: 2002/0079508 (2002-06-01), Yoshida
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patent: 2001-274140 (2001-10-01), None
patent: 2001-274140 (2001-10-01), None
Zhang, et al., “Effect of N2 Discharge Treatment on AlGaN/gaN High Electron Mobility Transistor Ohmic Contacts Using Inductively Coupled Plasma”, J. Vac. Sci. Technol. A 18(4), Jul./Aug. 2000, pp. 1149-1152.

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