Method for fabricating a semiconductor device having triple well

Details Method for fabricating a semiconductor device having triple well Method for fabricating a semiconductor device having triple well

1998-06-26

2000-05-23

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438227, 438232, 438450, 438527, H01L 218238

Patent

active

060665238

ABSTRACT:
The present invention relates to a method for fabricating semiconductor devices having triple wells, the present invention has an effect as follows. The present invention provides carrying out N-well and P-well and R-well ion implantation using a mask for implanting two wells after forming an element isolation oxide film, defining an accurate well region by forming wells having an accurate profile due to activating impurity ions in accordance with the thermal process, and improving the punch characteristic between a well and a well.

REFERENCES:
patent: 5397734 (1995-03-01), Iguchi et al.
patent: 5501993 (1996-03-01), Borland et al.
patent: 5693505 (1997-12-01), Kobayashi
patent: 5753956 (1998-05-01), Honeycutt et al.

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