Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-11
2006-07-11
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07074682
ABSTRACT:
In order to provide a method for preventing the channel length from being shortened as well as reducing the SAS resistance, the semiconductor device according to the present invention is manufactured by forming continuous linear trench lines on a semiconductor substrate, forming gate oxide lines on the semiconductor substrate between the trench lines, forming gate lines on the trench lines and the gate oxide lines, the gate lines being substantially perpendicular to the trench lines, etching the gate oxide lines and trench lines positioned between the gate lines, to form an etched region forming self aligned sources (SASs) by implanting impurity ions into the etched region, forming spacers on sidewalls of the gate lines, and implanting impurity ions in the SAS region using the spacers as a mask.
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Jung Sung Mun
Kim Jum Soo
DongbuAnam Semiconductor Inc.
Fortney Andrew D.
Pert Evan
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