Method for fabricating a semiconductor device having copper laye

Details Method for fabricating a semiconductor device having copper laye Method for fabricating a semiconductor device having copper laye

1997-04-23

1998-04-28

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438278, 438687, H01L 218246

Patent

active

057443947

ABSTRACT:
A semiconductor device comprises a plurality of transistors A semiconductor device comprising a plurality of transistors formed on a semiconductor substrate and a metal interconnection layer connected to at least one of the transistors, wherein the metal interconnection layer is composed of a single layer or multi layers, the single layer or at least one layer of the multi layers being formed of copper or a copper alloy, and is connected to at least one transistor wholly or partially through a barrier layer; and at least one of the transistor is controlled on its threshold voltage by a selective ion implantation after formation of the metal interconnection layer.

REFERENCES:
patent: 5091328 (1992-02-01), Miller
patent: 5238874 (1993-08-01), Yamada
patent: 5354712 (1994-10-01), Ho et al.

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor device having copper laye does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor device having copper laye, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor device having copper laye will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1531543