Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-14
2008-09-09
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S586000, C438S627000, C438S637000, C438S630000, C257SE21438, C257SE21507, C257SE21577
Reexamination Certificate
active
07422942
ABSTRACT:
A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.
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Karakawa Katsuyuki
Suzuki Kousuke
Fujitsu Limited
Lindsay Jr. Walter L.
Pompey Ron E
Westerman, Hattori, Daniels & Adrian , LLP.
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