Method for fabricating a semiconductor device having a tapered c

Details Method for fabricating a semiconductor device having a tapered c Method for fabricating a semiconductor device having a tapered c

1996-11-06

2000-08-22

Everhart, Caridad

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438257, 438701, 438723, H01L 218242

Patent

active

061071382

ABSTRACT:
A semiconductor device includes: a field oxide layer formed on a semiconductor substrate; a transistor having an active region formed on a semiconductor substrate; an interlayer insulating layer formed on the transistor and the field oxide; and a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process. A method for fabricating a semiconductor device includes the steps for: forming a field oxide layer on a semiconductor substrate; forming a transistor having an active region on a semiconductor substrate; forming an interlayer insulating layer on the resulting structure; and forming a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process.

REFERENCES:
patent: 4978634 (1990-12-01), Shen et al.
patent: 5206187 (1993-04-01), Doan et al.
patent: 5292684 (1994-03-01), Chung et al.
patent: 5312769 (1994-05-01), Matsuo et al.
patent: 5403767 (1995-04-01), Kim

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