Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Patent
1997-02-06
1999-10-26
Wilczewski, Mary
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
438525, 438528, 438775, 438776, 438369, H01L 21336, H01L 21223, H01L 21331, H01L 21265
Patent
active
059727837
ABSTRACT:
An element isolator is formed in a silicon substrate. A gate oxide film and a gate electrode are formed overlying the silicon substrate. Subsequently, a four-step large-tilted-angle ion implant is performed in which ions of nitrogen are implanted at an angle of tilt of 25 degrees, to form an oxynitride layer at each edge of the gate oxide film and to form a nitrogen diffusion layer in the silicon substrate. This is followed by formation of a lightly-doped source/drain region by means of impurity doping. A sidewall is formed on each side surface of the gate electrode, which is followed by formation of a heavily-doped source/drain region by impurity doping. The present invention provides an improved semiconductor device having high-performance, highly-reliable MOS field effect transistors and a method for fabricating the same.
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Arai Masatoshi
Segawa Mizuki
Yabu Toshiki
Matsushita Electric - Industrial Co., Ltd.
Wilczewski Mary
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