Method for fabricating a semiconductor device having a capacitor

Details Method for fabricating a semiconductor device having a capacitor Method for fabricating a semiconductor device having a capacitor

1997-03-19

1998-04-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

057443890

ABSTRACT:
A semiconductor device wherein an effective surface area is secured within a contact hole and wherein a storage electrode with rectangular corners is exactly patterned. The effective surface area within a contact hole can be obtained by overlapping the storage electrode contact hole with a portion of the storage electrode, so as to ensure more capacitance. Rounding of the corner of the rectangular storage electrode, which directs the resulting storage electrode to diminish in effective surface area, can be prevented by the different position of the storage electrode mask at the contact hole from one row or column to next, so as to make no difference between the patterned storage electrode and the designed one.

REFERENCES:
patent: 4656732 (1987-04-01), Teng et al.
patent: 4720908 (1988-01-01), Wills
patent: 5100838 (1992-03-01), Dennison
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5189506 (1993-02-01), Cronin et al.
patent: 5302855 (1994-04-01), Matsumoto et al.
patent: 5341026 (1994-08-01), Harada et al.
patent: 5346844 (1994-09-01), Cho et al.
patent: 5405796 (1995-04-01), Jones, Jr.
patent: 5442238 (1995-08-01), Takata
patent: 5444020 (1995-08-01), Lee et al.
patent: 5471094 (1995-11-01), Lien
patent: 5514911 (1996-05-01), Kim
patent: 5525552 (1996-06-01), Huang

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