Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S291000, C438S585000
Reexamination Certificate
active
07091093
ABSTRACT:
A gate electrode is formed over a semiconductor region with a gate insulating film interposed therebetween. An extended high-concentration dopant diffused layer of a first conductivity type is formed in part of the semiconductor region beside the gate electrode through diffusion of a first dopant. A pocket dopant diffused layer of a second conductivity type is formed under the extended high-concentration dopant diffused layer through diffusion of heavy ions. The pocket dopant diffused layer includes a segregated part that has been formed through segregation of the heavy ions.
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Noda Taiji
Odanaka Shinji
Umimoto Hiroyuki
Duy Mai Anh
Matsushita Electric - Industrial Co., Ltd.
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