Method for fabricating a semiconductor device having a...

Details Method for fabricating a semiconductor device having a... Method for fabricating a semiconductor device having a...

2011-07-26

2011-07-26

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S513000, C257S680000, C257S692000, C257S733000

Reexamination Certificate

active

07985639

ABSTRACT:
Methods are provided for fabricating a semiconductor device. A method forms a conductive fin arrangement on a first region of a semiconductor substrate. The method continues by forming a semiconductive resistor structure on a second region of the semiconductor substrate after forming the conductive fin arrangement, and forming a gate stack foundation structure overlying the conductive fin arrangement after forming the semiconductive resistor structure. The method removes portions of the gate stack foundation structure overlying the first region of the semiconductor substrate to define a gate structure for the semiconductor device.

REFERENCES:
patent: 6720231 (2004-04-01), Fried et al.
patent: 6872647 (2005-03-01), Yu et al.
patent: 6921963 (2005-07-01), Krivokapic et al.
patent: 7064413 (2006-06-01), Fried et al.
patent: 2010/0301417 (2010-12-01), Cheng et al.

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