Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-06-30
2010-11-16
Mai, Anh D (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C257SE21618
Reexamination Certificate
active
07833868
ABSTRACT:
A method for fabricating a semiconductor device, the method includes forming an isolation layer defining an active region over a substrate, forming a conductive layer over the substrate including the isolation layer, patterning the conductive layer to form a conductive pattern over the active region defined on both sides of a gate region, forming insulation spacers on a sidewall of the conductive pattern, forming a conductive layer for a gate electrode and a gate hard mask layer over the resulting structure including the conductive pattern, and patterning the gate hard mask layer and the conductive layer for the gate electrode to form a gate in the gate region of the substrate.
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Hynix / Semiconductor Inc.
Mai Anh D
Townsend and Townsend / and Crew LLP
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