Method for fabricating a semiconductor device for reducing a...

Details Method for fabricating a semiconductor device for reducing a... Method for fabricating a semiconductor device for reducing a...

2006-09-27

2008-11-11

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S535000, C257SE33034

Reexamination Certificate

active

07449399

ABSTRACT:
A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

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Zhang, et al., “Effect of N2 Discharge Treatment on AlGaN/GaN High Electron Mobility Transistor Ohmic Contacts Using Inductively Coupled Plasma”, J. Vac. Sci. Technol. A 18(4), Jul./Aug. 2000, p. 1149-52.

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