Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-12-19
2011-10-11
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S486000, C438S530000, C257SE21421
Reexamination Certificate
active
08034689
ABSTRACT:
A method for fabricating a semiconductor device and the device made thereof are disclosed. In one aspect, the method includes providing a substrate comprising a semiconductor material. The method further includes patterning at least one fin in the substrate, the fin comprising a top surface, at least one sidewall surface, and at least one corner. A supersaturation of point defects is created in the at least one fin. The at least one fin is annealed and then cooled down such that semiconductor atoms of the semiconductor material migrate via the point defects.
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Extended European Search Report dated Jul. 21, 2008, for EP Application No. 08153499.2.
Lenoble Damien
Rooyackers Rita
IMEC
Knobbe Martens Olson & Bear LLP
Quach Tuan N.
STMicroelectronics (Crolles2) SAS
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