Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-13
2008-11-18
Prenty, Mark (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S266000
Reexamination Certificate
active
07452771
ABSTRACT:
The semiconductor device comprises a first well14of a first conduction type formed in a semiconductor substrate10; a second well16of a second conduction type formed in the first well14; and a transistor40including a control gate18formed of an impurity region of the first conduction type formed in the second well16, a first impurity diffused layer26and a second impurity diffused layer33formed with a channel region25therebetween, and a floating gate electrode20formed on the channel region25and the control gate18with a gate insulation film24therebetween. The control gate18is buried in the semiconductor substrate10, which makes it unnecessary to form the control gate18on the floating gate electrode20. Thus, the memory transistor and the other transistors, etc. can be formed by the same fabricating process. Thus, the fabrication processes can be less and the semiconductor device can be inexpensive.
REFERENCES:
patent: 4608585 (1986-08-01), Keshtbod
patent: 5200636 (1993-04-01), Uemura et al.
patent: 5656838 (1997-08-01), Shinmori
patent: 5736764 (1998-04-01), Chang
patent: 5761121 (1998-06-01), Chang
patent: 5936276 (1999-08-01), Maurelli et al.
patent: 6410389 (2002-06-01), Cappelletti et al.
patent: 6576950 (2003-06-01), Cappelletti et al.
patent: 6977411 (2005-12-01), Ito et al.
patent: 3-126265 (1991-05-01), None
patent: 5-55602 (1993-03-01), None
patent: 7-288291 (1995-10-01), None
patent: 8-321562 (1996-12-01), None
patent: 10-70203 (1998-03-01), None
patent: 10-70204 (1998-03-01), None
patent: 10-223782 (1998-08-01), None
patent: 2001-319981 (2001-11-01), None
patent: 2002-15587 (2002-01-01), None
patent: 00363229 (1999-07-01), None
Office Action dated Nov. 20, 2007, issued in corresponding Japanese Application No. 2002-369463.
Furuyama Takaaki
Ito Masaki
Katayama Masaya
Kawabata Shozo
Fujitsu Limited
Prenty Mark
Westerman, Hattori, Daniels & Adrian , LLP.
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