Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2006-05-01

2008-12-02

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S209000, C438S270000, C257SE21429

Reexamination Certificate

active

07459358

ABSTRACT:
The semiconductor device includes an active region, a recess, a Fin-type channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation structure using an island-type recess gate mask as an etching mask. The Fin-type channel region is formed on the semiconductor substrate at a lower part of the recess. The gate insulating film is formed over the active region including the Fin-type channel region and the recess. The gate electrode is formed over the gate insulating film to fill up the Fin-type channel region and the recess.

REFERENCES:
patent: 6798017 (2004-09-01), Furukawa et al.
patent: 6798018 (2004-09-01), Takaishi et al.
patent: 2005/0173759 (2005-08-01), Kim et al.
patent: 2006/0273381 (2006-12-01), Kim et al.
patent: 2007/0173007 (2007-07-01), Lee et al.
patent: 10-2005-0038843 (2005-04-01), None
patent: 10-2005-0080612 (2005-08-01), None
J.Y. Kim et al., “S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond”, 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 34-35.

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