Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2007-03-27

2007-03-27

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S302000, C438S525000

Reexamination Certificate

active

10954484

ABSTRACT:
A method for fabricating the semiconductor device includes forming linear field oxide regions on a semiconductor substrate; forming gate oxide lines on the semiconductor substrate between the field oxide regions; forming gate lines on the field oxide regions and the gate oxide lines, the gate lines being substantially perpendicular to the field oxide regions; etching the gate oxide lines and the field oxide regions between the gate lines; and forming a self-aligned source (SAS) region by injecting impurity ions into the etched regions, the impurity ion being injected in a direction at a predetermined angle other than 90° relative to the semiconductor substrate.

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patent: 5547884 (1996-08-01), Yamaguchi et al.
patent: 6265292 (2001-07-01), Parat et al.
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patent: 6596586 (2003-07-01), Yang et al.
patent: 6740918 (2004-05-01), Ooi
patent: 10-2000-0043890 (2000-07-01), None
patent: 10-2002-0074336 (2002-09-01), None

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