Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2006-06-06

2006-06-06

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S387000, C438S397000

Reexamination Certificate

active

07056788

ABSTRACT:
A semiconductor device comprises: a lower contact electrode1; an adhesion improving layer3formed on the lower contact electrode1; and a capacitor including a lower electrode4in a projected structure formed on the adhesion improving layer3, a capacitor dielectric film5formed on the lower electrode4, and an upper electrode6formed on the capacitor dielectric film5, in which a gap is formed on a sidewall of the adhesion improving layer3. The gap is at least partially left as a cavity7. The gap insulates the upper electrode6and the adhesion improving layer3by the cavity7.

REFERENCES:
patent: 5654224 (1997-08-01), Figura et al.

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