Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2006-02-21

2006-02-21

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S303000, C438S305000

Reexamination Certificate

active

07001817

ABSTRACT:
A method for fabricating a semiconductor device, including forming a gate insulating film and a gate electrode film on a semiconductor substrate, and patterning the gate electrode film to form a gate electrode. A portion of the gate insulating film is removed to form an undercut region beneath the gate electrode. A buffer silicon film is formed over an entire surface of the resultant substrate to cover the gate electrode and to fill the undercut region. The buffer silicon film is selectively oxidized to form a buffer silicon oxide film.

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patent: 6596599 (2003-07-01), Guo
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patent: 20020013195 (2002-02-01), None
patent: 19990062007 (1999-07-01), None

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