Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2005-02-08

2005-02-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S381000, C438S680000

Reexamination Certificate

active

06852587

ABSTRACT:
A low temperature film deposition process fills fine gaps while avoiding removal of the deposited film in post-processes, and is applicable to formation of semiconductor devices having both sparse and dense patterned regions, such as a combined logic and memory hybrid semiconductor device. A thermal CVD (chemical vapor deposition) method is performed at a first pressure to form a first insulation film on a main surface of a substrate having patterned recesses therein and, after the recesses are substantially filled, a second thermal CVD process is performed under a second pressure, lower than the first pressure and without interruption of the supply of the film forming gas during the transition from the first to the second process, thereby to form an insulation film continuously and without a barrier layer therebetween. The insulation film material may include both boron and phosphor and may be formed by an alcoxylane saline and an alcoxyl compound of a conductive impurity and ozone under a growth pressure of 600 Torr or higher in the first process and a growth pressure of 600 Torr or lower in the second process. The insulation film may be subject to reflow annealing in a vapor-including atmosphere.

REFERENCES:
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6218318 (2001-04-01), Ohkura et al.
patent: 6228781 (2001-05-01), Murugesh et al.
patent: 6300655 (2001-10-01), Ema et al.
patent: 4-213829 (1992-08-01), None
patent: 10-189576 (1998-07-01), None

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