Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2005-09-20

2005-09-20

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S240000

Reexamination Certificate

active

06946351

ABSTRACT:
The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1−xOy(0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

REFERENCES:
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6617209 (2003-09-01), Chau et al.
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patent: 2002-033320 (2002-01-01), None
patent: WO 03/014830 (2003-02-01), None

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