Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1995-09-28

1997-04-01

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438353, 438370, 438373, 438766, 438207, H01L 21265

Patent

active

056165099

ABSTRACT:
It is the object of the invention to provide a method for fabricating a semiconductor device, such as a bipolar transistor, with improved characteristics when used in a semiconductor integrated circuit, without increasing the steps in fabricating process. In forming the graft base of the bipolar transistor, oxygen ions with higher energy than that of impurities are injected through the same mask. Thereafter, an insulating film is formed under the graft base region, by activating thermal treatment. Moreover, in a semiconductor integrated circuit of BiCMOS type, insulation films are formed under a source and a drain of a P-type transistor.

REFERENCES:
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4683637 (1987-08-01), Varker et al.
patent: 4963502 (1990-10-01), Teng et al.

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