Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1995-12-01

1997-06-24

Powell, William

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438705, 438696, 438486, H01L 2100

Patent

active

056413807

ABSTRACT:
There is proposed a process for performing (quasi-) anisotropic etching on a silicon-based material without using plasma. The process consists of irradiating a polycrystalline or single-crystalline silicon film or substrate with a beam of accelerated hydrogen ions, silicon ions, or rare gas ions, so that the crystalline silicon is made amorphous. Then, the amorphous silicon is placed in an atmosphere of fluorinated halogen. Since the etching rate of fluorinated halogen for amorphous silicon is greater than that for polycrystalline or single-crystalline silicon, etching takes place selectively at the area which has been irradiated with a beam of accelerated hydrogen ions, silicon ions, or rare gas ions. The selective etching permits (quasi-) anisotropic etching instead of sideward isotropic etching.

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G. Liu et al., "Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing, " App. Phys. Lett. 62(20), May 17, 1993, pp. 2554-2556.
G. Liu et al., "Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing," Appl. Phys. Lett. 55(7), Aug. 14, 1989, pp. 660-662.

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