Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-20
2008-10-21
Nguyen, Kimberly D (Department: 4174)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S394000, C438S785000, C438S250000, C438S689000
Reexamination Certificate
active
07439127
ABSTRACT:
A method is provided for fabricating a semiconductor component that includes a capacitor having a high capacitance per unit area. The component is formed in and on a semiconductor on insulator (SOI) substrate having a first semiconductor layer, a layer of insulator on the first semiconductor layer, and a second semiconductor layer overlying the layer of insulator. The method comprises forming a first capacitor electrode in the first semiconductor layer and depositing a dielectric layer comprising Ba1-xCaxTi1-yZryO3overlying the first capacitor electrode. A conductive material is deposited and patterned to form a second capacitor electrode overlying the dielectric layer, thus forming a capacitor having a high dielectric constant dielectric. An MOS transistor in then formed in a portion of the second semiconductor layer, the MOS transistor, and especially the gate dielectric of the MOS transistor, formed independently of forming the capacitor and electrically isolated from the capacitor.
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Advanced Micro Devices , Inc.
Diallo Mamadou
Ingrassia Fisher & Lorenz P.C.
Nguyen Kimberly D
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