Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-12-13
2005-12-13
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S300000, C438S307000, C438S589000
Reexamination Certificate
active
06974730
ABSTRACT:
A method for forming a field effect transistor device employs a self-aligned etching of a semiconductor substrate to form a recessed channel region in conjunction with a pair of raised source/drain regions. The method also provides for forming and thermally annealing the pair of source/drain regions prior to forming a pair of lightly doped extension regions within the field effect transistor device. In accord with the foregoing features, the field effect transistor device is fabricated with enhanced performance.
REFERENCES:
patent: 5814544 (1998-09-01), Huang
patent: 5985726 (1999-11-01), Yu et al.
patent: 6225173 (2001-05-01), Yu
patent: 6287926 (2001-09-01), Hu et al.
patent: 6475888 (2002-11-01), Sohn
patent: 6534352 (2003-03-01), Kim
patent: 2003/0052333 (2003-03-01), Mistry
patent: 014123439 (1992-04-01), None
Diaz Carlos H.
Jang Syun-Ming
Sheu Yi-Ming
Tao Hun-Jan
Yang Fu-Liang
Smoot Stephen W.
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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