Method for fabricating a nonvolatile memory element and a...

Details Method for fabricating a nonvolatile memory element and a... Method for fabricating a nonvolatile memory element and a...

2006-04-06

2008-08-12

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S099000, C438S253000, C438S270000, C257SE21209

Reexamination Certificate

active

07410868

ABSTRACT:
In a method for fabricating a nonvolatile memory element a substrate is provided, a nanomask structure is fabricated on the substrate and a self-assembled monolayer of an organic memory molecule is grown on the substrate on a region not covered by the nanomask structure. A surface of the substrate is patterned by means of an electrode beam in order to form regions with organic memory molecules and regions without organic memory molecules and a top contact is applied to the monolayer formed from the organic memory molecules and the nanomask.

REFERENCES:
patent: 2004/0256662 (2004-12-01), Black et al.
Husband et al., “Logic and Memory with Nanocell Circuits,”IEEE Transactions on Electron Devices, vol. 50, No. 9, pp. 1865-1875, Sep. 2003.
Kanwal et al., “Organic Memory Devices Using C60and Insulating Polymer,”Mater. Res. Soc. Symp. Proc., vol. 830, pp. D7.2.1-D7.2.5, 2005.
German Office Action dated Feb. 6, 2006.

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