Method for fabricating a nonvolatile memory cell

Details Method for fabricating a nonvolatile memory cell Method for fabricating a nonvolatile memory cell

2007-12-18

2007-12-18

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179

Reexamination Certificate

active

11735440

ABSTRACT:
A method of fabricating a nonvolatile memory cell includes providing a substrate with a trench, with a sidewall where a tunnel oxide layer and a floating gate are successively formed, forming a control gate in the trench, performing a high density plasma deposition process to form an HDP oxide layer on the top surface of control gate.

REFERENCES:
patent: 5110753 (1992-05-01), Gill et al.
patent: 2004/0188751 (2004-09-01), Lin
patent: 2007/0059898 (2007-03-01), Shin et al.

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