Method for fabricating a non-volatile memory including...

Details Method for fabricating a non-volatile memory including... Method for fabricating a non-volatile memory including...

2011-02-08

2011-02-08

Mai, Anh D (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S770000

Reexamination Certificate

active

07883975

ABSTRACT:
A method for fabricating a non-volatile memory is provided. The method includes a stacked structure and a consuming layer are formed in sequence over a substrate. A converting process is performed at a peripheral region of the consuming layer to form a first insulating layer. A conductive layer is formed over the stacked layer and the first insulating layer.

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patent: 6204530 (2001-03-01), Choi
patent: 7015541 (2006-03-01), Kim et al.
patent: 7071061 (2006-07-01), Pittikoun
patent: 7501679 (2009-03-01), Kwak
patent: 2006/0145244 (2006-07-01), Kwon

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