Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-09-16
2008-09-16
Toledo, Fernando L (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S300000, C977S762000, C977S813000
Reexamination Certificate
active
11482493
ABSTRACT:
The invention relates to a method for the production of a nanoelement field effect transistor, a nanoelement field effect transistor and a nanoelement arrangement. According to the method for the production of a nanoelement field effect transistor, a nanoelement is formed, a first and a second source-/drain area is coupled to the nanoelement, a surface area of a substrate is removed, such that a region of the nanoelement is exposed, and a gate-insulating structure and a gate structure are formed in a covered manner fully encompassing the nanoelement.
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Kreupl Franz
Seidel Robert
Qimonda AG
Slater & Matsil L.L.P.
Toledo Fernando L
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