Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-12-27
1998-01-27
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438255, 438396, 438398, 148DIG14, H01L 218242
Patent
active
057122024
ABSTRACT:
A method of fabricating double and multi-cylindrical storage capacitors is provided. To form a double crown capacitor, a conductive layer is formed on a multi-layer gate and insulation structure. The conductive layer includes a portion extending through a contact hole provided in the underlying insulation structure to thereby electrically connect the conductive layer with an active region of a transistor. A groove is formed in the conductive layer defining an area for a plurality of separated electrodes. First spacers are formed on the side walls of the groove. Then, the conductive layer is anisotrophically etched using the spacers as an etch mask thus forming an annular ridge around the area where the memory device is formed. The first spacers are then removed. Second and third spacers are then formed on the both sidewalls of the annular ridge. Again, the conductive layer is anisotrophically etched using the second and third spacers as an etch mask thus forming a double crown electrode from the remaining conductive layers under the second/third spacers. A capacitor dielectric layer and a top plate electrode layer are formed over the crown electrodes to complete the capacitor. The process of forming spacers on the sidewalls of the groove and on the annular ridge can be repeated to form multi-cylindrical (three or more walls) capacitors.
REFERENCES:
patent: 5330614 (1994-07-01), Ahn
patent: 5372965 (1994-12-01), Ryou
patent: 5380673 (1995-01-01), Yang et al.
patent: 5389560 (1995-02-01), Park
patent: 5389568 (1995-02-01), Yun
patent: 5399518 (1995-03-01), Sim et al.
Cherng Meng-Jaw
Liaw Ing-Ruey
Ackerman Stephen B.
Nguyen Tuan H.
Saile George O.
Stoffel William J.
Vanguard International Semiconductor Corporation
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