Method for fabricating a MIM capacitor high-K dielectric for...

Details Method for fabricating a MIM capacitor high-K dielectric for... Method for fabricating a MIM capacitor high-K dielectric for...

2007-05-22

2007-05-22

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S250000, C438S381000, C438S393000, C257S295000, C257S296000, C257S306000, C257SE21001

Reexamination Certificate

active

11121360

ABSTRACT:
According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a high-k dielectric layer comprising AlNX(aluminum nitride) on the first interconnect layer. The method further includes depositing a layer of MIM capacitor metal on the high-k dielectric layer. The method further includes etching the layer of MIM capacitor metal to form an upper electrode of the MIM capacitor. According to this exemplary embodiment, the first interconnect metal layer, the high-k dielectric layer, and the layer of MIM capacitor metal can be deposited in a PVD process chamber. The method further includes etching the high-k dielectric layer to form a MIM capacitor dielectric segment and etching the first interconnect metal layer to form a lower electrode of the MIM capacitor.

REFERENCES:
patent: 2004/0077141 (2004-04-01), Kim
patent: 2006/0205142 (2006-09-01), Ping et al.
patent: 01218054 (1989-08-01), None

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