Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-11
2007-09-11
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S303000, C257SE21351, C438S240000, C438S396000
Reexamination Certificate
active
10997638
ABSTRACT:
According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a layer of silicon nitride on the first interconnect layer. The layer of silicon nitride is deposited in a deposition process using an ammonia-to-silane ratio of at least 12.5. The method further includes depositing a layer of MIM capacitor metal on the layer of silicon nitride. The method further includes etching the layer of MIM capacitor metal to form an upper electrode of the MIM capacitor. According to this exemplary embodiment, the method further includes etching the layer of silicon nitride to form a MIM capacitor dielectric segment and etching the first interconnect metal layer to form a lower electrode of the MIM capacitor. The MIM capacitor has a capacitance density of at least 2.0 fF/um2.
REFERENCES:
patent: 5926359 (1999-07-01), Greco et al.
patent: 6459562 (2002-10-01), KarRoy et al.
patent: 2006/0084236 (2006-04-01), Vogt
Dornisch Dieter
Howard David
Li Guangming
Ring Kenneth M.
Wang Tinghao F.
Farjami & Farjami LLP
Newport Fab LLC
Sarkar Asok Kumar
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