Method for fabricating a micro machine

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S705000, C438S706000, C438S717000, C438S723000, C438S753000

Reexamination Certificate

active

06946398

ABSTRACT:
The method for fabricating a micro machine comprises the step of burying an oxide film54in a first semiconductor substrate6,the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film18therebetween, the step of forming a first mask66with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask66and an oxide film54as a mask to thereby form a spring portion20aintegral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask74with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask74,and the step of etching the insulation film18in the first region and the second region. The thickness of the torsion bar can be easily controlled. Thus, a micro machine having a torsion bar can be fabricated with high yields.

REFERENCES:
patent: 6271955 (2001-08-01), Atobe et al.
patent: 6555201 (2003-04-01), Dhuler et al.
patent: 6756310 (2004-06-01), Kretschmann et al.
patent: 2002/0131146 (2002-09-01), Gee et al.
patent: 2003/0007262 (2003-01-01), Tsuboi et al.
patent: 2003/0020565 (2003-01-01), Cornett et al.

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