Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1994-12-28
1997-04-15
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438298, 438303, 438307, 438291, H01L 21265, H01L 2144, H01L 21255, H01L 21302
Patent
active
056209118
ABSTRACT:
A method for fabricating a metal oxide semiconductor field effect transistor, capable of achieving a reduction in topology by forming a trench on a silicon substrate by use of a temporary field oxide film and forming a gate electrode in the trench and capable of eliminating occurrence of a spiking phenomenon due to a metal wiring being in direct contact with the silicon substrate by forming a silicide film on a source and a drain, and capable of obtaining an increased contact margin of the metal wiring by overlapping the silicide film with a field oxide film formed on the silicon substrate.
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Dutton Brian K.
Hyundai Electronics Industries Co,. Ltd.
Wilczewski Mary
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