Method for fabricating a memory cell

Details Method for fabricating a memory cell Method for fabricating a memory cell

2007-03-20

2007-03-20

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S324000, C257SE21180, C257SE21210, C257SE21423, C257SE29309

Reexamination Certificate

active

10862818

ABSTRACT:
Silicon nanocrystals are applied as storage layer (6) and removed using spacer elements (11) laterally with respect to the gate electrode (5). By means of an implantation of dopant, source/drain regions (2) are fabricated in a self-aligned manner with respect to the storage layer (6). The portions of the storage layer (6) are interrupted by the gate electrode (5) and the gate dielectric (4), so that a central portion of the channel region (3) is not covered by the storage layer (6). This memory cell is suitable as a multi-bit flash memory cell in a virtual ground architecture.

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