Method for fabricating a lateral metal-insulator-metal...

Details Method for fabricating a lateral metal-insulator-metal... Method for fabricating a lateral metal-insulator-metal...

2006-11-14

2006-11-14

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S381000, C438S393000

Reexamination Certificate

active

07135366

ABSTRACT:
A lateral metal-insulator-metal capacitor fabricated with consistent dummy fill and slotting patterns that assure predictable and controlled performance from the metalization layout while conforming to process design rules.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 6385033 (2002-05-01), Javanifard et al.

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