Method for fabricating a high dielectric capacitor

Details Method for fabricating a high dielectric capacitor Method for fabricating a high dielectric capacitor

1998-07-10

2000-07-18

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438686, 438643, 438644, 438239, 438240, 438396, H01L 214763, H01L 2144, H01L 218242, H01L 2120

Patent

active

060907045

ABSTRACT:
A method for fabricating a semiconductor device using a high dielectric material as a dielectric film of a capacitor wherein an etch stopping layer such as BST having a good dry etch selectivity with respect to an interlayer insulating film is formed on the adhesion layer formed on an upper electrode. This etch stopping layer prevents the upper electrode of a capacitor from being exposed to be etched during forming a metal contact.

REFERENCES:
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5903493 (1999-05-01), Lee
patent: 5972722 (1999-10-01), Visokay et al.

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