Method for fabricating a high bias device compatible with a low

Details Method for fabricating a high bias device compatible with a low Method for fabricating a high bias device compatible with a low

1998-11-27

1999-11-02

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438232, H01L 218238

Patent

active

059769220

ABSTRACT:
A method for fabricating a high-bias device compatible with a low-bias device is provided. The method of the invention includes using a doped well as a drift region of the high-bias device so that the drift region can be formed simultaneously when a well for a low-bias device is formed. The method of the invention also fabricates the high-bias device and the low-bias device simultaneously, using a commonly used photomask. Several ion implantation processes are also performed simultaneously. There is no need of some extra fabrication of photomasks and ion implantation processes separately used for forming the high-bias device.

REFERENCES:
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5486482 (1996-01-01), Yang
patent: 5550064 (1996-08-01), Yang

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