Method for fabricating a hard mask polysilicon gate

Details Method for fabricating a hard mask polysilicon gate Method for fabricating a hard mask polysilicon gate

2006-06-13

2006-06-13

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S725000, C438S734000, C438S736000

Reexamination Certificate

active

07060628

ABSTRACT:
A method for forming a patterned silicon-containing layer is disclosed. The method includes providing a substrate, providing a polysilicon layer on the substrate, providing a hard mask layer on the polysilicon layer, patterning and etching the hard mask layer and etching the polysilicon layer according to the pattern of the hard mask layer using a fluorine-containing etchant gas. The resulting sidewall profile of the etched polysilicon layer is substantially straight, uniform and devoid of a necking or notched configuration.

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